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  data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. npn silicon rf transistor ne68018 / 2sc501 3 npn epitaxial silicon rf transistor for high-frequency low-noise amplification 4-pin super minimold the mark ? shows major revised points. document no. pu10 518ej01v0ds (1st edition) (previous no. p10401ej2v0ds00) date published august 2004 cp(k) features ? high gain bandwidth product (f t = 10 ghz typ.)  low noise, high gain  low voltage operation  4-pin super minimold package ordering information part number quantity supplying form ne68018-a 2SC5013-a 50 pcs (non reel) ne68018-a 2SC5013-t1-a 3 kpcs/reel  8 mm wide embossed taping  pin 3 (base), pin 4 (emitter) face to perforation side of the tape remark to order evaluation samples, contact your nearby sales office. the unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 35 ma total power dissipation p tot note 150 mw junction temperature t j 150 c storage temperature t stg ?65 to +150 c note free air jeita part no.
data sheet pu10518ej01v0ds 2 ne68018 / 2SC5013 electri cal characterist i cs ( t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cb o v cb = 10 v , i e = 0 ma ? ? 1.0 ? ? 1.0 n ote 1 v ce = 6 v, i c = 10 ma 50 100 250 ? rf characteristics gain bandwidth product f t v ce = 6 v, i c = 10 ma ? 1 0 ? ghz inserti on power gai n ? s 21e ? 2 v ce = 6 v, i c = 10 ma, f = 2.0 ghz 7.5 9.5 ? db noise figure nf v ce = 6 v, i c = 5 ma, f = 2.0 ghz ? 1.8 3.0 db reverse transfer capacitance c r e n ote 2 v cb = 10 v , i e = 0 ma, f = 1.0 mhz ? 0.25 0.8 pf notes 1. pulse measurement: pw 350 2 % 2 . collector to base capacit ance when the emitter grounded h f e classi fi cati on rank eb fb gb marking r46 r47 r48 h f e value 50 to 100 80 to 160 125 to 250
data sheet pu10518ej01v0ds 3 typi cal characteristi cs (t a = +25 c, unless otherwise specified) collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage dc current gain h fe collector current i c (ma) collector current dc current gain vs. gain bandwidth product f t (ghz) collector current i c (ma) vs. collector current gain bandwidth product 250 200 150 100 50 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature free air reverse transfer capacitance c re (pf) collector to base voltage v cb (v) vs. collector to base voltage reverse transfer capacitance collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 2.0 1.0 1 0.5 0.1 0.2 5 10 20 50 f = 1 mhz 2 50 0.5 1.0 0 40 30 20 10 v ce = 6 v 30 20 10 2 1 8 2 0 4 6 10 a remark t he g raphs indicate nominal characteris tics . ne68018 / 2SC5013
data sheet pu10518ej01v0ds 4 frequency f (ghz) maximum available gain/insertion power gain vs. frequency insertion power gain |s 21e | 2 (db) collector current i c (ma) insertion power gain vs. collector current insertion power gain |s 21e | 2 (db) collector current i c (ma) noise figure vs. collector current noise figure nf (db) maximum available gain mag (db) 0.1 50 0 10 0.5 1.0 v ce = 6 v i c = 10 ma 20 30 40 |s 21e | 2 mag 5.0 1 12 0 8 5 10 20 50 v ce = 6 v f = 2 ghz 2 4 5 4 1 3 0 1 2 5 10 50 v ce = 6 v f = 2 ghz 0 2 2 remark the g raphs indicate nominal charac te rist ic s. s-parameters ne68018 / 2SC5013
data sheet pu10518ej01v0ds 5 package di mensi ons 4-pin super minimold (unit: mm) 0.90.1 0.15 +0.1 ?0.05 0.3 0 to 0.1 3 1.30 2.00.2 1.25 0.65 0.60 4 2 1 2.10.2 1.250.1 0.65 0.65 0.4 +0.1 ?0.05 0.3 +0.1 ?0.05 0.3 +0.1 ?0.05 0.3 +0.1 ?0.05 1. collector 2. emitter 3. base 4. emitter pin connections r47 ne68018 / 2SC5013
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. california eastern laboratories and renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. california eastern laboratories has used reasonable care in preparing the information included in this document, but california eastern laboratories does not warrant that such information is error free. california eastern laboratories and renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. california eastern laboratories and renesas electronics do not assume any liability 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